Send by kneia on 29/10/2024
The RHODaS project has published a new public report entitled “Active Gate Drivers for High-Power, High-Frequency WBG Devices". The report focuses on the development and evaluation of advanced gate drivers (AGDs) for high-power, high-frequency wide bandgap (WBG) devices, specifically silicon carbide (SiC) and gallium nitride (GaN) transistors. The research aims to address the challenges posed by the high-speed switching characteristics of these devices, which can lead to issues such as oscillations, overshoots, and electromagnetic interference (EMI).